Semiconductor Device Modelling
Semiconductor models connect device characteristics to converter loss and temperature calculations. The work in this area builds models from measured and reference data that can be evaluated at any electrical operating point, so that loss and temperature can be predicted early in converter design.
SiC Power Devices — Static ANN Modelling
Neural networks fit the conduction voltage, turn-on and turn-off energy and thermal impedance of the C2M0080120D SiC MOSFET, treating the MOSFET channel and body diode separately. The modelling, led by the author, ranges from organising the reference data and structuring the networks to the loss and thermal calculations they feed.
Read the static ANN modelling study
Related Measurements
The models map operating conditions to characteristic values and event energies; switching-transient waveform modelling is outside their scope. Double-pulse testing supplies switching-energy data, and thermal characterisation identifies the heat path needed for temperature estimation.